www.sciencedaily.com
Researchers have achieved record-breaking charge mobility in a strained germanium layer grown on silicon. This innovation allows for significantly faster electron movement compared to any existing silicon-compatible material. This improved mobility paves the way for cooler, faster, and more energy-efficient microchips. Furthermore, the breakthrough enhances the potential of creating silicon-based quantum computing devices, potentially revolutionizing the field. This advancement represents a significant step forward in both conventional electronics and quantum technologies.
